PART |
Description |
Maker |
AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT |
AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏,只有闪存
|
Atmel Corp. Atmel, Corp.
|
AT45DB041B AT45DB041B-CC AT45DB041B-CI AT45DB041B- |
4M bit, 2.7-Volt Only Serial-Interface Flash with Two 264-Byte SRAM Buffers 4-megabit 2.5-volt Only or 2.7-volt Only DataFlash
|
ATMEL[ATMEL Corporation] ETC
|
AT45DB041D-SSU-2.5 AT45DB041D-SU-2.5 AT45DB041D-MU |
4-megabit 2.5-volt or 2.7-volt DataFlash 4M X 1 FLASH 2.7V PROM, DSO8 4-megabit 2.5-volt or 2.7-volt DataFlash 4M X 1 FLASH 2.7V PROM, PDSO8
|
Atmel Corp. Atmel, Corp.
|
AT49F2048A AT49F2048A-70RC AT49F2048A-70RI AT49F20 |
2M bit, 5-Volt Read and 5-Volt Write Flash, Bottom Boot From old datasheet system 2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO44 2-megabit 256K x 8/ 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆,32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc. PROM Spansion, Inc. SPANSION LLC
|
AT49BV162A AT49BV163A AT49BV162A-70CI AT49BV162AT- |
16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory 16兆位米x 16/2M × 8伏,只有闪存
|
Atmel Corp. Atmel, Corp.
|
AT45DB081D AT45DB081D-SU-2.5 AT45DB081D-SSU-2.5 AT |
8-megabit 2.5-volt or 2.7-volt DataFlash 8M X 1 FLASH 2.7V PROM, PDSO8
|
Atmel Corp. Atmel, Corp.
|
AM29F016B-70EEB AM29F016B-70EIB AM29F016B-120DGI1 |
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory 16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory-Die Revision 1 16 megabit CMOS 5.0 volt-only uniform flash memory
|
Advanced Micro Devices
|
AT49BV802A-70CI AT49BV802AT-70CI |
8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 8-megabit (512K x 16/ 1M x 8) 3-volt Only Flash Memory 8兆位(为512k × 16 / 1米8伏,只有闪存
|
Atmel, Corp.
|
AM29F040B AM29F040B-70 29F040 AM29F040B-90PIB AM29 |
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 4兆位12亩8位)的CMOS 5.0伏只,统一部门快闪记忆 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
|
ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
AM50DL9608GT75IS AM50DL9608GT70IS AM50DL9608GT70IT |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc. Spansion, Inc.
|